document number: 94592 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 26-oct-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 schottky rectifier, 2.1 a vs-20mq060npbf vishay semiconductors features ? low forward voltage drop ? guard ring for enhan ced ruggedness and long term reliability ? small foot print, surface mountable ? high frequency operation ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level description the vs-20mq060npbf surface mount schottky rectifier has been designed for applic ations requiring low forward drop and very small foot prints on pc boards. typical applications are in disk drive s, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. product summary package sma i f(av) 2.1 a v r 60 v v f at i f see electrical table i rm 7.5 ma at 125 c t j max. 150 c diode variation single die e as 2.0 mj cathode anode s ma major ratings and characteristics symbol characteristics values units i f(av) rectangular waveform 2.1 a v rrm 60 v i fsm t p = 5 s sine 40 a v f 2 apk, t j = 125 c 0.68 v t j range - 55 to 150 c voltage ratings parameter symbol vs-20mq060npbf units maximum dc reverse voltage v r 60 v maximum working peak reverse voltage v rwm absolute maximum ratings parameter symbol test conditions values units maximum average forward current see fig. 4 i f(av) 50 % duty cycle at t c = 107 c, rectan gular waveform on pc board 9 mm 2 island (0.013 mm th ick copper pad area) 2.1 a maximum peak one cycle non-repetitive surge current see fig. 6 i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 40 a 10 ms sine or 6 ms rect. pulse 10 non-repetitive avalanche energy e as t j = 25 c, i as = 1 a, l = 4 mh 2.0 mj repetitive avalanche current i ar current decaying linearly to zero in 1 s frequency limited by t j maximum v a = 1.5 x v r typical 1.0 a
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94592 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 26-oct-10 vs-20mq060npbf vishay semiconductors schottky rectifier, 2.1 a note (1) pulse width < 300 s, duty cycle < 2 % note (1) thermal runaway condition fo r a diode on its own heatsink electrical specifications parameter symbol test conditions values units maximum forward voltage drop see fig. 1 v fm (1) 2 a t j = 25 c 0.78 v 1.5 a 0.71 1 a 0.63 2 a t j = 125 c 0.68 1.5 a 0.63 1 a 0.57 maximum reverse leakage current see fig. 2 i rm (1) t j = 25 c v r = rated v r 0.5 ma t j = 125 c 7.5 threshold voltage v f(to) t j = t j maximum 0.45 v forward slope resistance r t 86.8 m ? typical junction capacitance c t v r = 10 v dc , t j = 25 c, test signal = 1 mhz 31 pf typical series inductance l s measured lead to lead 5 mm from package body 2.0 nh maximum voltage rate of change dv/dt rated v r 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j (1) , t stg - 55 to 150 c maximum thermal resistance, junction to ambient r thja dc operation 80 c/w approximate weight 0.07 g 0.002 oz. marking device case style sma (similar d-64) 2h dp tot dt j ------------- 1 r thja -------------- <
document number: 94592 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 26-oct-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 vs-20mq060npbf schottky rectifier, 2.1 a vishay semiconductors fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical peak reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum average forward current vs. allowable lead temperature fig. 5 - maximum average forward dissipation vs. average forward current fig. 6 - maximum peak surge forward current vs. pulse duration note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r i f - instantaneous forward current (a) v fm - forward voltage drop (v) 0.2 0.4 0.8 1.2 0.6 1.0 1.4 1.6 0.1 1 10 94592_01 t j = 150 c t j = 125 c t j = 25 c i r - reverse current (ma) v r - reverse voltage (v) 010 30 50 40 20 60 0.0001 0.01 0.001 0.1 1 10 100 94592_02 t j = 125 c t j = 150 c t j = 100 c t j = 75 c t j = 50 c t j = 25 c c t - junction capacitance (pf) v r - reverse voltage (v) 01020 50 40 30 60 10 100 94592_03 t j = 25 c allowa b le case temperature (c) i f(av) - average forward current (a) 2.0 1.5 1.0 0 . 3 5 . 02.5 3.5 0 130 150 160 50 90 110 140 70 60 100 120 80 94592_04 d = 0.20 d = 0.25 d = 0.33 d = 0.50 d = 0.75 dc sq uare wave (d = 0.50) rated v r applied s ee note (1) average power loss (w) i f(av) - average forward current (a) 1.6 2.0 1.2 0.8 0.4 2.4 0 94592_05 1.0 1.4 0 0.4 0.6 1.2 0.8 0.2 d = 0.20 d = 0.25 d = 0.33 d = 0.50 d = 0.75 dc rm s limit 1 10 100 t p - s quare wave pulse duration (s) i f s m - non-repetitive s urge current (a) 10 94592_06 1000 10 000 100 at any rated load condition and with rated v rrm applied following s urge
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94592 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 26-oct-10 vs-20mq060npbf vishay semiconductors schottky rectifier, 2.1 a ordering information table links to related documents dimensions www.vishay.com/doc?95018 part marking information www.vishay.com/doc?95029 packaging information tape and reel www.vishay.com/doc?95034 bulk www.vishay.com/doc?95397 spice model www.vishay.com/doc?95396 2 - current rating 3 - m = sma 4 - q = schottky ?q? series 5 - voltage rating (060 = 60 v) 6 - n = new sma 7 - none = box (1000 pieces) tr = tape and reel (7500 pieces) - pbf = lead (pb)-free 8 1 - vishay semiconductors product device code 5 13 24 678 vs- 20 m q 060 n tr pbf
document number: 95018 for technical questions concer ning discrete products, cont act: diodes-tech@vishay.com www.vishay.com revision: 25-jun-07 for technical qu estions concerning module products , contact: ind-modules@vishay.com 1 sma outline dimensions vishay high power products dimensions in millimeters (inches) 2.50 (0.098) 2.90 (0.114) 4.00 (0.157) 4.60 (0.181) 1.40 (0.055) 1.60 (0.062) 0.152 (0.006) 0.305 (0.012) 2.00 (0.078) 2.44 (0.096) 0.76 (0.030) 1.52 (0.060) 0.103 (0.004) 0.203 (0.008) 4.80 (0.188) 5.28 (0.208) 2.10 max. (0.085 max. ) 5.53 (0.218) 1.27 min. (0.050 min.) 1.47 min. (0.058 min.) soldering pad 12 1 2 polarity part number
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